c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . WFF15N60 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics wt-f0 58 -rev.a 1 jan .201 4 features ? 15a,600v, r ds(on) (max0.52 ? )@v gs =10v ? ultra-low gate charge(typical 36nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi's advanced planar stripe,dmos technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .this devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. absolute maximum ratings symbol parameter value units v dss drain source voltage 600 v i d continuous drain current(@tc=25 ) 15* a continuous drain current(@tc=100 ) 9.5* a i dm drain current pulsed (note1) 60* a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 245 mj i ar avalanche current note 1 15 a e ar repetitive avalanche energy (note1) 23.9 mj dv/dt peak diode recovery dv /dt (note3) 9.8 v/ ns p d total power dissipation(@tc=25 ) 53 w derating factor above 25 0.42 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 *drain current limited by maximum junction temperature thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 2.36 /w r qja thermal resistance , junction-to -ambient - - 62 .5 /w g d s
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 2 / 8 WFF15N60 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 600 v,v gs =0v - - 1 0 a v ds =480v,tc=125 100 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25 - 0.79 - v/ gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 3 - 5 v drain -source on resistance r ds(on) v gs =10v,i d = 7.5 a - 0.45 0.52 ? forward transconductance gfs v ds = 40 v,i d = 7.5 a - 19.8 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 2270 3000 pf reverse transfer capacitance c rss - 23 37 output capacitance c oss - 300 405 switching time turn-on rise time tr v dd = 250 v, i d = 15 a r g = 25 ? (note4,5) - 78 162 ns turn-on delay time t d( on ) - 50 101 turn-on fall time tf - 66 128 turn-off delay time t d( off ) - 120 261 total gate charge(gate-source plus gate-drain) qg v dd =4 80 v, v gs =1 0 v, i d = 15 a (note 4 ,5) - 36 60 nc gate-source charge qgs - 9 - gate-drain("miller") charge qgd - 16 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 15 a pulse drain reverse current i drp - - - 60 a forward voltage(diode) v dsf i dr = 15 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 15 a,v gs =0v, di dr / dt =100 a / s - 600 - ns reverse recovery charge qrr - 7.2 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 2.0m h i as = 15 a,v dd =50v,r g = 25 ? ,starting t j =25 3.i sd 15 a,di/dt 2 00a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 3 / 8 WFF15N60 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.1 on region characteristics fig.2 transfer characteristics fig.3 on-resistance variation vs drain current and gate voltage fig.4 body diode forward voltage variation vs source current and temperature fig.5 capacitance characteristics fig.6 gate charge characteristics n o t e s : 1 . 2 5 0 u s p u ls e t e s t 2 . tc =2 5 c t o p v g s 1 5 v 1 0 v 9 v 8 v 7 v 6 . 5 v 6 v 5 . 5 v 5 v b o t t o m 1 1 0 1 1 0 1 0 0 v [v] d s i [ a ] d n o t e s : 1 . 2 5 0 u s p u ls e t e s t 2 . v =2 0 v d s 150 c 2 5 c 1 0 1 0 . 1 2 3 4 5 6 7 8 9 1 0 v [v] g s i [ a ] d n o t e s : t = 2 5 c v =10v g s v =20v g s 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 2 0 2 2 i [a] d r [ ] d s ( o n ) 0 . 3 0 0 . 3 5 0 . 4 0 0 . 4 5 0 . 5 0 0 . 5 5 0 . 6 0 0 . 6 5 0 . 7 0 0 . 7 5 0 . 8 0 2 5 c 150 c no t e s : 1 . 2 5 0 u s p u ls e t e s t 2 . v =0 v g s 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 1 . 1 0 . 1 1 1 0 v [v] s d i [ a ] d r 1 0 1 0 0 1 0 0 0 1 0 0 0 0 1 0 - 1 1 0 0 1 0 1 ciss=cgs+cgd(cds=shorted) coss=cds+cgd crss= cgd c is s c o s s c r s s notes: 1.v =0v 2.f= 1mh z g s v drain-source voltage[v] d s c a p a c i t a n c e [ p f ] v =480v d s v =380v d s v =120v d s 0 1 0 2 0 3 0 4 0 0 2 4 6 8 1 0 1 2 qg toltal gate charge[nc] v g a t e s o u r c e v o l t a g e [ v ] g s *note:i =15a d
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 4 / 8 WFF15N60 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig. 9 maximum safe operation area fig. 10 maximum drain currentvs case temperature fig. 11 transient thermal response curve fig.7 breakdown voltage variation vs temperature fig.8 on-resistance variation vs temperature - 7 5 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 . 8 0 0 . 8 5 0 . 9 0 0 . 9 5 1 . 0 0 1 . 0 5 1 . 1 0 1 . 1 5 1 . 2 0 n o t e s : 1 . v = 0 v 2 . i = 2 5 0 u a g s d t [ c ] j b v ( n o r m a l i z e d ) d s - 7 5 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 . 0 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 t [ c ] j r ( n o r m a l i z e d ) d s ( o n ) notes: 1.v = 10v 2.i = 7.5a g s d operation in this area is limited by r ds(on) 1 0 u s 1 m s 100us 1 0 m s 100m s d c 1 0 0 1 0 1 1 0 2 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 2 note: 1.t =25 c 2.t =150 c 3.single pulse c j v d rai n-s ource vol tage[v ] d s i d r a i n c u r r e n t [ a ] d 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 2 0 t case temperature[ c ] c i d r a i n c u r r e n t [ a ] d 1.z (t)=3.6 c/w max. 2.duty factor,d=t1/t2 3.t -t =p * j c jm c dm z (t) j c * n o te d 0 5 = . 0 2 . 0 1 . 0 05 . 0 02 . 0 01 . single pulse t ,square wave pulse duration [sec] 1 z ( t ) , t h e r m a l r e s p o n s e j c p d m t 1 t 2 1 e - 5 1 e - 4 1 e - 3 0 . 0 1 0 . 1 1 1 0 1 1 0 01 . 0 1 . 1
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 5 / 8 WFF15N60 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.12 gate test circuit & waveform fig.13 resistive switching test circuit & waveform fig.14 unclamped inductive switching test circuit & waveform 1 2 v 2 0 0 n f 3 m a 3 0 0 n f 5 0 k v g s d u t v g s v d s 1 0 v c h a rg e same type a s d u t q g s q g d q g 1 0 v r g v g s v d s r l v d s v g s d u t 9 0 % 1 0 % t d (o n ) t r t d (o ff) t o n t o f f t f v d d 1 0 v r g l i d v d d e a s = b v d s s b v d s s - v d d 1 2 l i a s 2 d u t b v d s s i a s i t d ( ) t i m e v d s ( ) t t p t p v d s v d d
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 6 / 8 WFF15N60 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.1 5 peak diode recovery dv/dt test circuit & waveform v d s d u t i s d l driver s am e type a s d u t r g v g s v d d dv/dt controlled by r g i conteolled by pulse period s d v g s (driver) d = gate pulse width gate pulse period 1 0 v i s d i ,body diode forward current f m (dut) v d s i s d (dut) i r m di/dt body diode reverse current body diode recovery dv/dt v d d body diode forward voltage drop v s d
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 7 / 8 WFF15N60 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics to-220 f package dimension e q d p l 2 b b l e e q 1 c a f symbol m i n m a x a 4 . 5 4 . 9 b - 1 . 4 7 b 0 . 7 0 . 9 c 0 . 4 5 0 . 6 d 1 5 .6 7 1 6 .0 7 e 9 . 9 6 1 0 .3 6 e 2 .5 4 t ype f 2 . 3 4 2 . 7 4 l 1 2 .5 8 1 3 .3 8 l 2 3 . 1 3 3 . 3 3 3 . 0 8 3 . 2 8 q 3 . 2 3 . 4 q 1 2 . 5 6 2 . 9 6 p u n i t:m m
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 8 / 8 WFF15N60 product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics note: note: note: note: 1. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2. please do not exceed the absolute maximum ratings of the device when circuit designing. 3. winsemi microelectronics co., ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. contact: contact: contact: contact: winsemi microelectronics co., ltd. add:futian district, shenzhen tian an cyber tech plaza two east wing 1002 post code : 518040 tel : +86-755-8250 6288 fax : +86-755-8250 6299 web site : www.winsemi.com
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